The 2SB1260-R is a PNP silicon epitaxial planar transistor manufactured by Micro Commercial Components (MCC). It is designed for use in various amplifier and switching applications.

Applications

• Amplifier circuits
• Switching circuits
• Driver stages
• DC-DC converters
• Power management circuits

Features

• High collector current (IC = -3A)
• Low saturation voltage
• High hFE (current gain)
• Fast switching speed
• Excellent linearity
• RoHS compliant

Benefits

• High amplification capability
• Efficient switching performance
• Minimal power loss
• Reduced switching time
• Accurate signal amplification
• Environmentally friendly

Specifications

The 2SB1260-R transistor has the following key specifications:

• Polarity: PNP
• Collector-Emitter Voltage (VCEO): -50V
• Collector-Base Voltage (VCBO): -60V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -3A
• Collector Dissipation (PC): 1.2W
• DC Current Gain (hFE): 100 to 320 (at IC = -0.5A, VCE = -5V)
• Transition Frequency (fT): 140 MHz
• Operating Temperature Range: -55°C to +150°C
• Package: TO-92

The high collector current rating of the 2SB1260-R allows it to handle significant loads, making it suitable for driving larger components or circuits. The low saturation voltage minimizes power dissipation during switching, enhancing efficiency. The high current gain ensures that a small base current can control a larger collector current, providing effective amplification.

The transistor's fast switching speed makes it a good fit for high-frequency applications, while its excellent linearity ensures accurate signal amplification without distortion. The TO-92 package is commonly used and easily integrated into various circuit designs.