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JANS2N2369AUB

Part No JANS2N2369AUB
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V UB / Bipolar (BJT) Transistor NPN 20 V 360 mW Surface Mount UB
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Microchip Technology
Series Military, MIL-PRF-19500/317
Package Bulk
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 1V
Power - Max 360 mW
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Supplier Device Package UB
Base Product Number 2N2369
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1 pcs
Win Source Part Number 1382398-JANS2N2369AUB
Ultra Librarian 3D Model Ultra Librarian JANS2N2369AUB CAD Model

Description

The JANS2N2369AUB is a high-quality, military-grade transistor developed by Microchip Technology, a leader in the field of microcontroller and analog semiconductors. This product is specifically designed to meet the stringent requirements of aerospace and defense applications, ensuring reliability and performance in extreme conditions.

Key Features

  • High Reliability: The JANS2N2369AUB is built to meet or exceed the specifications of MIL-PRF-19500/331, ensuring dependable operation in mission-critical applications.
  • Temperature Range: This transistor is capable of operating across a wide temperature range, making it suitable for use in environments with extreme thermal conditions.
  • Hermetically Sealed: The device is hermetically sealed, which protects it against moisture and other environmental contaminants that could otherwise compromise its performance.
  • Radiation Hardened: It is designed to withstand high levels of radiation, a necessity for space applications and other high-radiation environments.
  • Low Saturation Voltage: The JANS2N2369AUB offers low saturation voltage, which helps in reducing power losses and improving efficiency in electronic circuits.

Applications

The JANS2N2369AUB is ideally suited for a variety of demanding applications, including:

  • Space systems and satellites
  • Military and defense equipment
  • High-reliability avionics
  • Nuclear power plant instrumentation
  • Other harsh environment electronic systems

Technical Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (VCEO) 15V Collector-Base Voltage (VCBO) 60V Emitter-Base Voltage (VEBO) 6.0V Collector Current - Continuous (IC) 500mA Power Dissipation (Pd) 800mW

For engineers and designers seeking a reliable transistor capable of withstanding harsh environments, the JANS2N2369AUB from Microchip Technology is an excellent choice that combines performance with rugged durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $93.8797 $93.8797
2+ $77.0295 $154.0590
3+ $74.6224 $223.8672
4+ $72.2152 $288.8608
5+ $69.8080 $349.0400
6+ $62.5864 $375.5184
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 850 pieces
Order Increment : 1 pcs
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