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APT31M100L Real Image
Same model may have multiple batches, images only for reference.

APT31M100L

Part No APT31M100L
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT31M100L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 400 mOhm @ 16A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264
Package TO-264-3, TO-264AA
Win Source Part Number 1146750-APT31M100L
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT31M100L
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT31M100L CAD Model

Description

The Microsemi APT31M100L is a medium popularity, limited supply and demand power MOSFET designed for use in discrete semiconductor products.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Product Type: Power MOSFET
  • Series: POWER MOS 8
  • Maximum Power Dissipation: 1040W @ Tc
  • Operating Temperature Range: -55°C to 150°C
  • Drive Voltage: 10V
  • Drain Source Voltage: 1000V
  • Manufacturer: Microsemi Corporation

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