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Same model may have multiple batches, images only for reference.
APT34N80B2C3 Real Image
Same model may have multiple batches, images only for reference.

APT34N80B2C3

Part No APT34N80B2C3
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 34A T-MAX
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2mA
Max Gate Charge 355nC @ 10V
Max Input Capacitance 4510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 417W (Tc)
Maximum Rds On at Id,Vgs 145 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package T-MAX [B2]
Dimension TO-247-3 Variant
Win Source Part Number 051459-APT34N80B2C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT34N80B2C3 CAD Model

Description

APT34N80B2C3 - Advanced N-Channel MOSFET

The APT34N80B2C3 features advanced technology that supports high-speed operation and low conduction loss. It is an excellent choice for demanding applications.

  • Applications: Solar inverters, Uninterruptible power supplies, Induction heating
  • Features: High power handling, Robust design, Fast switching capabilities
  • Benefits: Reduced power loss, Enhanced reliability, Lower operational cost

This MOSFET offers superior performance in renewable energy systems and industrial equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6643 $58.3215
13+ $9.5703 $124.4139
19+ $9.2712 $176.1528
26+ $8.9720 $233.2720
34+ $8.6729 $294.8786
45+ $7.7766 $349.9470
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Availability: 8,200 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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