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Same model may have multiple batches, images only for reference.
APT56M60B2 Real Image
Same model may have multiple batches, images only for reference.

APT56M60B2

Part No APT56M60B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 56A T-MAX / Trans MOSFET N-CH Si 600V 60A 3-Pin(3+Tab) TO-247 Tube
Datasheet
APT56M60B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 280nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11300pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 130 mOhm @ 28A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3 Variant
Win Source Part Number 768705-APT56M60B2
Popularity Medium
Supply and Demand Status Limited
Family Name APT56M60B2
Introduction Date October 04, 2006
ECCN EAR99
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian APT56M60B2 CAD Model

Description

The APT56M60B2 is a POWER MOS 8 series MOSFET manufactured by Microsemi Corporation.

  • Drain Source Voltage: 600V
  • Maximum Power Dissipation: 1040W (Tc)
  • RoHS Compliant: Yes
  • Estimated EOL Date: 2025
  • Supply and Demand: Limited

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