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Same model may have multiple batches, images only for reference.
APT8075BN
Same model may have multiple batches, images only for reference.

APT8075BN

Part No APT8075BN
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 13A TO247AD
Datasheet
APT8075BN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Dimension TO-247-3
Win Source Part Number 1018121-APT8075BN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT8075BN CAD Model

Description

The Microsemi Corporation MOSFET is a discrete semiconductor product that is widely used in various electronic applications.

  • Design: designed to provide high performance and reliability
  • Features: low on-resistance
  • Suitable for: high power applications
  • Benefits: reliable and cost-effective solution for your electronic needs

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