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Same model may have multiple batches, images only for reference.
JAN2N1016D
Same model may have multiple batches, images only for reference.

JAN2N1016D

Part No JAN2N1016D
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description TRANS NPN 200V 7.5A TO82  /  Bipolar (BJT) Transistor NPN 200 V 7.5 A 150 W TO-82
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microsemi Corporation
Series Military, MIL-PRF-19500/102
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 7.5 A
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 5A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 7.5A, 4V
Power - Max 150 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Supplier Device Package TO-82
Base Product Number 2N1016
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1086-16072-MIL,150-JAN2N1016D,1086-16072,1086-16072-ND
Standard Package 1
Win Source Part Number 1219496-JAN2N1016D
Ultra Librarian 3D Model Ultra Librarian JAN2N1016D CAD Model

Description

The JAN2N1016D is a bipolar junction transistor (BJT) from Microsemi Corporation.

  • Transistor Type: NPN
  • Power - Max: 150W
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Current - Collector (Ic) (Max): 7.5A
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7.5A, 4V
  • Package: TO-82
  • Temperature Range: -65°C to 150°C (TJ)
  • Product Status: Obsolete
  • RoHS Compliant: Non-Compliant

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