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UPA1870GR(1)-9JG-E1-A

Part No UPA1870GR(1)-9JG-E1-A
Manufacturer NEC
Catalog HOT - SALES and EOL Components (U - Z)
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Rohs State rohs
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Manufacturer NEC
Win Source Part Number 389231-UPA1870GR(1)-9JG-E1-A
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1870GR(1)-9JG-E1-A CAD Model

Description

The UPA1870GR(1)-9JG-E1-A is a power MOSFET from NEC (now Renesas Electronics). It is designed for high-efficiency, low on-resistance switching applications. This MOSFET is commonly used in power management circuits, DC-DC converters, and load switches.

Applications:

  • DC-DC converters
  • Power management circuits
  • Load switches
  • Motor control circuits
  • Backlight inverters

Features:

  • Low on-resistance: Minimizes power loss during switching, improving efficiency.
  • High-speed switching: Enables faster switching frequencies, leading to smaller and more efficient power converters.
  • Logic level drive: Allows direct driving from logic circuits, simplifying the design.
  • Surface mount package: Facilitates automated assembly and reduces board space.
  • RoHS compliant: Meets environmental regulations regarding hazardous substances.

Benefits:

  • Improved power efficiency: Reduced on-resistance minimizes power dissipation, leading to cooler operation and extended battery life in portable devices.
  • Simplified circuit design: Logic level drive eliminates the need for additional driver circuitry.
  • Reduced board space: Surface mount package enables compact designs.
  • Enhanced system reliability: Rugged design ensures reliable operation in demanding environments.
  • Environmentally friendly: RoHS compliance ensures compliance with environmental regulations.

Technical Specifications:

While specific electrical characteristics vary depending on the exact batch and datasheet revision, typical specifications include:

  • Drain-Source Voltage (V DSS): Typically 30V
  • Gate-Source Voltage (V GS): Typically ±20V
  • Continuous Drain Current (I D): Several Amperes (Value depends on specific conditions and package thermal resistance)
  • On-Resistance (R DS(on)): Very low, typically in the milliohm range (Value depends on V GS and I D)
  • Gate Threshold Voltage (V GS(th)): Typically a few volts, allowing logic-level drive
  • Total Gate Charge (Q g): Low gate charge for fast switching

Consult the manufacturer's datasheet for detailed specifications and application notes.

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