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UPA1912TE

Part No UPA1912TE
Manufacturer NEC
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer NEC
Win Source Part Number 389257-UPA1912TE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1912TE CAD Model

Description

The UPA1912TE is a P-Channel Power MOSFET from NEC (now Renesas), designed for efficient switching applications. This component is commonly found in DC-DC converters, load switches, and power management circuits. It's designed to minimize power loss and maximize efficiency in portable devices and power supplies.

Applications

  • DC-DC Converters: Regulates voltage levels in various electronic devices.
  • Load Switches: Controls power distribution for various components and subsystems.
  • Power Management Circuits: Manages power consumption in portable devices and other applications.
  • Motor Control: Drives small DC motors in low-power applications.

Features

  • P-Channel MOSFET: Simplifies gate drive requirements.
  • Low On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.
  • Small Surface Mount Package: Enables high-density mounting and miniaturization.
  • High-Speed Switching: Minimizes switching losses and improves efficiency.

Benefits

  • Increased Efficiency: Low RDS(on) minimizes power dissipation, leading to higher efficiency.
  • Compact Design: Small package size allows for space-saving solutions.
  • Simplified Gate Drive: P-Channel configuration simplifies gate drive implementation.
  • Reliable Operation: Designed for stable and consistent performance.

Technical Specifications

Typical specifications include Drain-Source Voltage (VDS), Gate-Source Voltage (VGS), Drain Current (ID), On-Resistance (RDS(on)), and Total Gate Charge (Qg). Consult the official Renesas datasheet for UPA1912TE for detailed specifications.

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