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Same model may have multiple batches, images only for reference.
2N7002PV,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

2N7002PV,115

Part No 2N7002PV,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.35A SOT-666
Datasheet
2N7002PV,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 350mA
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 330mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1004064-2N7002PV,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N7002PV,115 CAD Model

Description

The 2N7002PV,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc.

  • Type: Dual N-channel enhancement mode Field-Effect Transistor (FET)
  • Maximum Power Dissipation: 330mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 350mA @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Rds On: 1.6 Ohm @ 500mA, 10V
  • Package Type: SOT-666
  • Operating Temperature Range: 150°C (TJ)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1479 $50.2860
825+ $0.1213 $100.0725
1,280+ $0.1175 $150.4000
1,760+ $0.1138 $200.2880
2,275+ $0.1100 $250.2500
3,045+ $0.0986 $300.2370
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Availability: 120,000 pieces
MOQ: 340 pcs
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