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Same model may have multiple batches, images only for reference.
BC847CQAZ Real Image
Same model may have multiple batches, images only for reference.

BC847CQAZ

Part No BC847CQAZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A DFN1010D-3 / Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 280 mW Surface Mount DFN1010D-3
Datasheet
BC847CQAZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 280 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Case / Package 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3
Base Product Number BC847
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 568-12986-2,934069068147,568-12986-1,1727-2547-2,BC847CQAZ-ND,1727-2547-1,1727-2547-6,568-12986-6-ND,568-12986-6,568-12986-2-ND,568-12986-1-ND
Standard Package 5,000
Win Source Part Number 1325083-BC847CQAZ
Ultra Librarian 3D Model Ultra Librarian BC847CQAZ CAD Model

Description

The Nexperia USA Inc. BC847CQAZ is an NPN bipolar transistor designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 45 V
  • Maximum Collector Current: 100 mA
  • DC Current Gain (hFE): 420 @ 2mA and 5V
  • Frequency Transition: 100MHz
  • Package: 3-XDFN exposed pad package
  • Packaging: Reel package
  • Classification: EAR99

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