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Same model may have multiple batches, images only for reference.
NXV100XPR Nexperia USA Inc. – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

NXV100XPR

Part No NXV100XPR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description NXV100XP/SOT23/TO-236AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT);
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 354 pF @ 15 V
Power Dissipation (Max) 340mW (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model Ultra Librarian NXV100XPR CAD Model

Description

TO-236-3, SC-59, SOT-23-3

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