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Same model may have multiple batches, images only for reference.
PHP30NQ15T,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHP30NQ15T,127

Part No PHP30NQ15T,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 29A TO220AB
Datasheet
PHP30NQ15T,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 2390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1087832-PHP30NQ15T,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHP30NQ15T,127 CAD Model

Description

The Nexperia USA Inc. PHP30NQ15T,127 MOSFET is an N-channel device with a drain-source breakdown voltage of 150V and a continuous drain current @ 25°C of 29A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 55nC @ 10V
  • Maximum Input Capacitance: 2390pF @ 25V
  • Maximum Rds On: 63 mOhm @ 15A, 10V
  • Category: Discrete Semiconductor Products
  • Packaging: Tube/Rail
  • Supply and Demand Status: Sufficient

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