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Same model may have multiple batches, images only for reference.
PSMN028-100YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN028-100YS,115

Part No PSMN028-100YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
PSMN028-100YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1634 pF @ 50 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN028
Other Names 1727-5226-6,568-6543-6,1727-5226-2,PSMN028-100YS,115,568-6543-1,568-6543-2,1727-5226-1,568-6543-6,934064534115,568-6543-2,568-6543-1
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278241-PSMN028-100YS,115
Ultra Librarian 3D Model Ultra Librarian PSMN028-100YS,115 CAD Model

Description

The PSMN028-100YS,115 from Nexperia USA Inc. is an N-channel MOSFET with a drain to source voltage of 100V and a continuous drain current of 42A at 25°C.

  • Power Dissipation: 89W
  • Temperature Range: -55°C to 175°C
  • Mounting Technology: SMD (SMT)
  • Package: SC-100, SOT-669
  • Standard Package: 1,500

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Quantity Unit Price Ext. Price
40+ $1.3231 $52.9240
95+ $1.0856 $103.1320
145+ $1.0517 $152.4965
200+ $1.0178 $203.5600
255+ $0.9839 $250.8945
345+ $0.8821 $304.3245
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Availability: 13,500 pieces
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