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AFT23H200-4S2LR6

Part No AFT23H200-4S2LR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.3GHZ NI1230-4 / Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS (Dual)
Frequency 2.3GHz
Gain 15.3dB
Voltage - Test 28V
Current - Test 500mA
Power - Output 45W
Voltage Rating DC 65V
Package NI-1230-4LS2L
Manufacturer Package NI-1230-4LS2L
Win Source Part Number 768332-AFT23H200-4S2LR6
Popularity Medium
Supply and Demand Status Balance
Family Name AFT23H200-4S2LR6
Introduction Date April 05, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian AFT23H200-4S2LR6 CAD Model

Description

Introducing the NXP AFT23H200-4S2LR6 RF Power Transistor

The NXP AFT23H200-4S2LR6 is a state-of-the-art RF power LDMOS transistor that is designed to meet the demanding requirements of high-power applications. This robust transistor is ideal for use in a wide range of applications, including but not limited to, broadcast transmitters, aerospace, and mobile radio applications. With its high efficiency and reliability, the AFT23H200-4S2LR6 is a top choice for engineers and designers looking to maximize performance in their RF power systems.

Key Features

  • High Power: The AFT23H200-4S2LR6 delivers a high output power of 200W, making it suitable for applications that require significant signal amplification.
  • Wide Frequency Range: This transistor operates effectively over a broad frequency range from 1.8 to 2000 MHz, providing flexibility and making it a versatile component for various RF applications.
  • High Efficiency: With an advanced LDMOS technology, the AFT23H200-4S2LR6 achieves high efficiency, which is critical for reducing thermal loads and improving system reliability.
  • Durability: It is designed to withstand severe load mismatch conditions with a high VSWR rating, ensuring durability and long-term performance in harsh environments.
  • Integrated ESD Protection: The transistor comes with integrated ESD protection, safeguarding the device against electrostatic discharges and enhancing its robustness.

Applications

The versatility of the AFT23H200-4S2LR6 allows it to be used in a variety of applications. It is particularly well-suited for:

  • Broadcast transmitters for FM radio or TV
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense systems, including radar and avionics
  • Professional mobile radio (PMR) systems
  • Linear and digital RF power amplifiers

Quality and Support

NXP is known for its commitment to quality, and the AFT23H200-4S2LR6 is no exception. Customers can expect reliable performance backed by NXP's comprehensive technical support. Whether integrating this RF power transistor into new designs or upgrading existing systems, the AFT23H200-4S2LR6 is an excellent choice for achieving high power, efficiency, and reliability.

For detailed specifications, application notes, and support documentation, please visit the NXP Semiconductors official website or contact their customer support team.

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