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MMRF1018NBR1

Part No MMRF1018NBR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 120V 860MHZ / RF Mosfet 50 V 350 mA 860MHz 22dB 18W TO-272 WB-4
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 860MHz
Gain 22dB
Voltage - Test 50 V
Current - Test 350 mA
Power - Output 18W
Voltage - Rated 120 V
Mounting Type Chassis Mount
Package / Case TO-272BB
Supplier Device Package TO-272 WB-4
Base Product Number MMRF1
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345981-MMRF1018NBR1
Ultra Librarian 3D Model Ultra Librarian MMRF1018NBR1 CAD Model

Description

The MMRF1018NBR1 is a cutting-edge RF power transistor from NXP Semiconductors, designed with state-of-the-art technology to deliver unparalleled performance for a wide range of applications. This high-power, high-efficiency transistor is ideal for use in RF energy, industrial, scientific, and medical (ISM) applications, as well as for radio and VHF TV broadcast transmitters.

Key Features

  • Frequency Range: The MMRF1018NBR1 operates at a frequency range of 1-2700 MHz, making it highly versatile for various applications within the RF spectrum.
  • High Power: With an impressive output power of 18 W CW, this device can handle demanding applications that require a robust power output.
  • Efficiency: It offers high efficiency, which is crucial for minimizing heat generation and power loss, thereby enhancing the overall system performance and reliability.
  • Integrated ESD Protection: The device comes with integrated electrostatic discharge (ESD) protection, safeguarding it against unexpected voltage spikes and improving its durability.
  • Thermal Performance: The MMRF1018NBR1 boasts excellent thermal performance due to its plastic overmolded package, which ensures effective heat dissipation.

Applications

The versatility of the MMRF1018NBR1 makes it suitable for a variety of applications, including:

  • Industrial heating and welding equipment.
  • Medical diagnostic and therapeutic equipment.
  • Plasma generators.
  • RF power amplifiers for broadcast and communication systems.
  • Scientific research equipment.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the MMRF1018NBR1 is no exception. It is manufactured to meet the highest industry standards, ensuring long-term reliability and consistent performance in the most challenging environments.

Environmental Considerations

The MMRF1018NBR1 is designed with environmental considerations in mind, meeting RoHS compliance and other regulatory standards, thereby contributing to a greener and more sustainable future.

With its robust design, high efficiency, and broad frequency range, the MMRF1018NBR1 from NXP is an excellent choice for designers looking for a reliable and powerful RF power transistor.

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