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PMV60EN,215

Part No PMV60EN,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.7A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 9.4nC @ 10V
Max Input Capacitance 350pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 280mW (Tj)
Maximum Rds On at Id,Vgs 55 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 004426-PMV60EN,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV60EN,215 CAD Model

Description

The PMV60EN,215 is a high-performance, energy-efficient N-channel Trench MOSFET produced by NXP Semiconductors, a leader in the field of advanced electronic components. This MOSFET is designed to meet the rigorous requirements of modern electronic applications, offering a compact form factor and exceptional performance characteristics.

Key Features

  • Low On-Resistance: The PMV60EN,215 boasts an extremely low on-state resistance (R<sub>DS(on)), which translates into reduced conduction losses and enhanced efficiency in operation.
  • High-Speed Switching: Engineered for high-speed switching applications, this MOSFET provides rapid transition performance, which is essential for high-frequency power conversion and regulation circuits.
  • Low Threshold Voltage: With a low gate threshold voltage, the PMV60EN,215 is compatible with low-voltage drive signals, making it ideal for low-power applications and logic-level interfaces.
  • Thermal Management: The device is encapsulated in a small, surface-mount SOT-23 package, which aids in efficient heat dissipation and minimizes thermal resistance.
  • Energy Saving: By minimizing conduction and switching losses, this MOSFET supports energy-saving designs and contributes to the overall reduction of power consumption in electronic systems.

Applications

The PMV60EN,215 is suitable for a wide range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Modules
  • Computing and Communication Devices

Product Specifications

The PMV60EN,215 operates with a continuous drain current (I<sub>D) of 3.1A and a maximum drain-source voltage (V<sub>DS) of 60V. The device's power dissipation is rated at 1.25W, and it can handle pulsed drain currents up to 12A. Its threshold voltage ranges from 1V to 2.5V, which allows for flexible use in various circuit designs.

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PMV60EN,215 is no exception and is manufactured to meet stringent industry standards for reliability and performance, ensuring a long operational lifespan and consistent functionality across a broad range of environmental conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2737 $58.8455
515+ $0.2252 $115.9780
795+ $0.2183 $173.5485
1,095+ $0.2114 $231.4830
1,415+ $0.2044 $289.2260
1,900+ $0.1825 $346.7500
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,001 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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