The 2N3904RLRAH by ON Semiconductor is a highly versatile NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This transistor is well-known in the industry for its reliability and efficiency, which makes it an ideal choice for a wide range of electronic circuits.

Key Features

• Transistor Polarity: NPN - This allows for efficient current amplification when a small base current controls a larger collector-emitter current.
• Collector-Emitter Voltage (VCEO): 40V - Provides a good balance between breakdown voltage and power dissipation, making it suitable for various applications.
• Collector Current (IC): 200mA - Capable of handling moderate levels of current, which is sufficient for many signal processing tasks.
• Power Dissipation (Pd): 625mW - The ability to dissipate heat efficiently ensures stable performance and longevity.
• DC Current Gain (hFE): 100 to 300 - Offers a substantial amplification factor, which is crucial for many electronic applications.
• Operating Temperature Range: -55°C to +150°C - A wide operating temperature range ensures reliability in various environmental conditions.

Applications

The 2N3904RLRAH transistor is commonly used in a myriad of applications, including but not limited to:

• Signal amplification circuits
• Switching devices
• Linear amplification stages
• Audio amplifiers
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is a trusted name in the semiconductor industry, and the 2N3904RLRAH is manufactured to meet the highest quality and reliability standards. The device is available in a TO-92 package, which is a widely accepted standard for through-hole components, and is RoHS compliant, ensuring adherence to environmental regulations.

Whether you're designing an experimental project or a commercial product, the 2N3904RLRAH from ON Semiconductor is a solid choice for your circuit needs, providing consistent performance and a long operational life.