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2SD1193

Part No 2SD1193
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 60V 15A 70000mW 3-Pin(3+Tab) TO-3PB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 157587-2SD1193
Popularity Low
Supply and Demand Status Balance
Family Name 2SD1193
Introduction Date December 10, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SD1193 CAD Model

Description

The 2SD1193 is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for use in a wide range of electronic applications. This versatile transistor is well-suited for audio frequency amplifier applications and can also be utilized in power switching circuits due to its robust characteristics.

Key Features

  • High Current Capacity: The 2SD1193 is capable of handling a collector current up to 1.5 A, making it suitable for medium power applications.
  • High Voltage Rating: With a collector-emitter voltage (VCEO) of 120 V, it can be used in circuits that operate at higher voltages, providing a good margin for breakdown protection.
  • Low Saturation Voltage: The transistor has a low VCE(sat) which ensures efficient operation at high currents with minimal power loss.
  • Complementary PNP Type: It has a complementary PNP partner, making it easy to design push-pull amplifier stages for better efficiency and thermal stability.

Applications

The 2SD1193 is ideal for a variety of applications including:

  • Audio power amplifiers
  • Driver stages in Hi-Fi amplifiers
  • Power supply regulators
  • DC-DC converters
  • Switching applications

Reliability and Performance

ON Semiconductor is known for its commitment to quality and reliability, and the 2SD1193 is no exception. It is designed to meet rigorous industry standards, ensuring consistent performance and a long operational life. Whether for commercial, industrial, or consumer electronics, the 2SD1193 offers a reliable solution for designers looking to optimize their circuitry with a dependable transistor option.

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 120V Collector Current (IC) 1.5A Collector Power Dissipation (PC) 25W DC Current Gain (hFE) 70 to 700

For detailed product specifications, technical data, and application notes, customers should consult the official datasheet and product documentation available from ON Semiconductor.

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