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BC808-25LT1G

Part No BC808-25LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 25V 0.5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 096760-BC808-25LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC808-25LT1G CAD Model

Description

Product Overview: BC808-25LT1G from ON Semiconductor

The BC808-25LT1G is a high-performance PNP bipolar transistor brought to you by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed to meet the rigorous demands of modern electronic circuits, providing reliable and efficient performance. With its compact SOT-23 package, the BC808-25LT1G offers designers a space-saving solution for their PCB layouts.

Key Features

  • Transistor Polarity: PNP - This device uses a PNP configuration, making it suitable for use in positive ground circuits or as a switch in various applications.
  • Collector-Emitter Voltage (VCEO): 25V - The BC808-25LT1G can withstand up to 25 volts across the collector-emitter junction, making it suitable for a range of intermediate voltage applications.
  • Collector Current (IC): 500mA - With a maximum continuous collector current rating of 500mA, this transistor can handle moderate power loads, making it versatile for both signal amplification and switching tasks.
  • DC Current Gain (hFE): 160 to 400 - The device features a high current gain, ensuring efficient current amplification in analog circuits.
  • Power Dissipation (Pd): 300mW - The BC808-25LT1G is capable of dissipating up to 300 milliwatts, allowing it to manage power without overheating.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - This wide temperature range ensures stable operation in extreme environmental conditions.

Applications

The BC808-25LT1G is suitable for a variety of applications, including:

  • Signal amplification in audio and video equipment
  • Power management in portable devices
  • Driver stages in amplifiers
  • Switching operations in consumer electronics
  • Load switch circuits
  • General-purpose switching and amplification

ON Semiconductor's commitment to quality ensures that the BC808-25LT1G is a reliable component for designers and manufacturers. Whether you're working on a new design or looking to replace an existing part, the BC808-25LT1G offers the performance and durability needed for a wide range of electronic applications.

Environmental and Regulatory Compliance

The BC808-25LT1G is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental responsibility. This compliance ensures that the product is suitable for use in various markets worldwide, adhering to strict environmental regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0440 $50.1600
2,775+ $0.0361 $100.1775
4,290+ $0.0350 $150.1500
5,900+ $0.0339 $200.0100
7,625+ $0.0328 $250.1000
10,205+ $0.0294 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,700 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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