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BC858CDXV6T1G

Part No BC858CDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 30V 0.1A SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum) 15nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 500mW
Frequency - Transition 100MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package SOT-563, SOT-666
Manufacturer Package SOT-563
Manufacturer Homepage www.onsemi.com
Win Source Part Number 744741-BC858CDXV6T1G
Family Name BC858CDXV6
Introduction Date March 14, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC858CDXV6T1G CAD Model

Description

ON Semiconductor BC858CDXV6T1G - PNP Bipolar Transistor

The ON Semiconductor BC858CDXV6T1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a reliable component that offers a combination of high performance and low power consumption, making it suitable for a wide range of electronic circuits.

Key Features:

  • Transistor Polarity: PNP - The BC858CDXV6T1G is a PNP transistor, which means it is controlled by a negative current and is primarily used for low-power switching and amplifying signals.
  • Collector-Emitter Voltage (Vceo): 30V - This transistor can withstand up to 30 volts across the collector-emitter junction, providing a good margin for various electronic designs.
  • Collector Current (Ic): 100mA - It can handle a continuous collector current of up to 100 milliamperes, making it suitable for a range of light to medium-duty applications.
  • Power Dissipation (Pd): 250mW - With a power dissipation of 250 milliwatts, the BC858CDXV6T1G can manage a modest amount of heat generated during operation without the need for additional heat sinking in most applications.
  • DC Current Gain (hFE): 160 to 400 - This transistor has a high current gain, ensuring efficient amplification in various electronic circuits.
  • Package / Case: SOT-563 - The small SOT-563 package is ideal for space-constrained applications and allows for high-density mounting on printed circuit boards.

Applications:

The BC858CDXV6T1G is a versatile component that can be used in a variety of applications, including but not limited to:

  • Audio amplifiers and preamplifiers
  • Signal processing
  • Switching circuits
  • Linear amplification stages
  • Power management functions

In summary, the ON Semiconductor BC858CDXV6T1G is a high-performance PNP transistor that offers excellent amplification capabilities with low power requirements. Its robust design and compact form factor make it an excellent choice for designers looking to create efficient and reliable electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1044 $50.1120
1,170+ $0.0857 $100.2690
1,810+ $0.0830 $150.2300
2,490+ $0.0804 $200.1960
3,220+ $0.0777 $250.1940
4,315+ $0.0696 $300.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,240 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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