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BSP16T1

Part No BSP16T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 300V 0.1A SOT-223 / High Voltage Transistors PNP Silicon
Sample
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Manufacturer ON Semiconductor
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 300V
Vce Saturation (Maximum) at Ib, Ic 2V at 5mA, 50mA
Current - Collector Cutoff (Maximum) 50μA
DC Current Gain (hFE) (Min) at Ic, Vce 30 at 50mA, 10V
Power - Max 1.5W
Frequency - Transition 15MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-261-4, TO-261AA
Supplier Device Package SOT-223
Part Number Series BSP16
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803484-BSP16T1
Ultra Librarian 3D Model Ultra Librarian BSP16T1 CAD Model

Description

ON Semiconductor BSP16T1 PNP Bipolar Transistor

The ON Semiconductor BSP16T1 is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is known for its robustness and efficiency, making it an ideal choice for designers looking for a reliable transistor for switching and amplification purposes.

Constructed with ON Semiconductor's advanced process technology, the BSP16T1 offers excellent power handling capabilities with a collector-emitter voltage (VCEO) of -80V. This allows the transistor to be used in circuits with relatively high voltage requirements without compromising its performance or longevity.

One of the key features of the BSP16T1 is its high current capacity, with a continuous collector current (IC) rating of up to -1A. This makes it suitable for moderate to high-power applications, where a PNP transistor is needed to control significant amounts of current. Additionally, the device has a power dissipation (PD) of 1.5W, ensuring that it can handle substantial power without overheating.

The transistor's hFE, or DC current gain, is another critical parameter that defines its amplification capabilities. The BSP16T1 boasts a high hFE, which means it can amplify weak input signals to a much stronger output without requiring a large base current. This characteristic is particularly beneficial in audio amplifiers, signal processing circuits, and other applications where signal integrity is paramount.

Furthermore, the BSP16T1 is packaged in a compact SOT-223 surface-mount package, which allows for efficient use of PCB space and is suitable for automated assembly processes. The small footprint combined with the high thermal performance of the package makes it an excellent choice for densely packed electronic designs where space is at a premium.

In summary, the ON Semiconductor BSP16T1 PNP bipolar transistor offers a balance of high voltage and current capabilities, excellent gain characteristics, and a compact form factor. It is a reliable component for designers seeking a PNP transistor that can deliver consistent performance in a variety of applications such as power management, signal amplification, and switching circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
470+ $0.1240 $58.2800
1,135+ $0.1019 $115.6565
1,760+ $0.0986 $173.5360
2,420+ $0.0956 $231.3520
3,130+ $0.0923 $288.8990
4,190+ $0.0827 $346.5130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,560 pieces
MOQ: 470 pcs
Order Increment : 1 pcs
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