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BSS123LT1G

Part No BSS123LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Input Capacitance 20pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 100mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012149-BSS123LT1G
Family Name BSS123L
Introduction Date May 07, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Automotive
Ultra Librarian 3D Model Ultra Librarian BSS123LT1G CAD Model

Description

ON Semiconductor BSS123LT1G N-Channel Logic Level MOSFET

The BSS123LT1G is a high-performance N-Channel Logic Level MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This compact semiconductor device is engineered to deliver efficient power control and switching with low on-state resistance and a minimal gate charge, making it an excellent choice for a wide range of applications.

Key Features

  • Device Type: MOSFET - Metal Oxide Semiconductor Field Effect Transistor
  • Channel Type: N-Channel
  • Drain-to-Source Voltage (V<sub>DS): 100V
  • Continuous Drain Current (I<sub>D): 170 mA
  • Gate-to-Source Voltage (V<sub>GS): ±20V
  • R<sub>DS(on): 5 Ohm at V<sub>GS = 10V
  • Configuration: Single
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3

Applications

The BSS123LT1G is suitable for a variety of applications, including but not limited to:

  • DC/DC converters
  • Power management functions
  • Load switches
  • Motor drives
  • Battery management systems
  • Logic level translation

Performance and Efficiency

This MOSFET is designed to handle significant power levels despite its small size. Its low threshold voltage makes it compatible with logic-level devices, allowing it to be directly driven by microcontrollers without the need for additional driver circuits. The BSS123LT1G's low on-state resistance ensures minimal power loss during operation, which translates to higher efficiency in electronic circuits.

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability, and the BSS123LT1G is no exception. It is designed to meet the stringent requirements of the industrial market, offering long operational life and stability under varying conditions. Its robustness is further enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through the use of ON Semiconductor's innovative technology.

Whether you're designing power supplies, sensors, or IoT devices, the BSS123LT1G provides a reliable and efficient solution for your switching and amplification needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,240+ $0.0404 $50.0960
2,640+ $0.0379 $100.0560
4,100+ $0.0366 $150.0600
5,885+ $0.0340 $200.0900
7,625+ $0.0328 $250.1000
9,525+ $0.0315 $300.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 413,710 pieces
MOQ: 1240 pcs
Order Increment : 1 pcs
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