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BSS84LT1G

Part No BSS84LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 130MA SOT-23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Input Capacitance 30pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012166-BSS84LT1G
Family Name BSS84L
Introduction Date December 18, 2000
ECCN EAR99
Country of Origin China, Czech Republic
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Communications & Networking, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian BSS84LT1G CAD Model

Description

Product Overview: BSS84LT1G by ON Semiconductor

The BSS84LT1G is a high-performance P-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This small-signal field-effect transistor is well-suited for a variety of applications, thanks to its compact SOT-23 package and its ability to efficiently manage power in electronic circuits.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (VDS): -50V
  • Continuous Drain Current (ID): -130mA
  • Power Dissipation (PD): 225mW
  • RDS(on): 8 Ohm
  • Package: SOT-23
  • RoHS: Compliant

Applications

The BSS84LT1G is ideal for a range of applications, particularly where space is at a premium and power efficiency is crucial. Its typical applications include:

  • Load/Power Switching
  • Power Management Functions
  • Battery Management Systems
  • Converters and Inverters
  • Portable Devices

Performance and Reliability

ON Semiconductor's BSS84LT1G boasts excellent on-resistance and low threshold voltage, which ensures minimal conduction losses and promotes energy efficiency. The device is also characterized by its fast switching speed, enhancing the performance of high-frequency applications.

The MOSFET's robust thermal performance is due to its power dissipation capabilities, which enables reliable operation even under demanding conditions. Additionally, the BSS84LT1G is designed to withstand electrostatic discharge (ESD) events, further ensuring the longevity and reliability of the device in sensitive electronic environments.

Environmental Compliance

Committed to environmental stewardship, ON Semiconductor ensures that the BSS84LT1G is RoHS compliant, meaning it is free from hazardous substances such as lead, mercury, and cadmium. This compliance reflects the company's dedication to producing environmentally friendly products without compromising on quality or performance.

In summary, the BSS84LT1G from ON Semiconductor is a versatile and efficient P-Channel MOSFET that offers designers a reliable solution for power management in compact electronic systems. Its robust design, fast switching capabilities, and compliance with environmental standards make it an excellent choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,240+ $0.0404 $50.0960
2,640+ $0.0379 $100.0560
4,100+ $0.0366 $150.0600
5,885+ $0.0340 $200.0900
7,625+ $0.0328 $250.1000
9,525+ $0.0315 $300.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 384,000 pieces
MOQ: 1240 pcs
Order Increment : 1 pcs
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