ON Semiconductor CAT28C16AX20 EEPROM

The CAT28C16AX20 from ON Semiconductor is a high-performance 16-kilobit parallel Electrically Erasable Programmable Read-Only Memory (EEPROM) integrated circuit, ideal for applications that require fast and reliable non-volatile memory storage. With a 16K memory density, this EEPROM provides ample storage for your configuration parameters, calibration data, or small application code.

Key Features

• Memory Size: 16 Kbit (2K x 8-bit organization), offering a substantial amount of data storage capability for various applications.
• Speed: Fast access time of 200 ns, ensuring high-speed performance for critical applications.
• Operating Voltage: Wide VCC range from 4.5V to 5.5V, making it suitable for 5V logic systems and compatible with many microcontrollers and digital systems.
• Low Power Consumption: Features low power CMOS technology, which minimizes power usage during operation and standby, thus extending the life of battery-powered devices.
• Endurance: Capable of 1,000,000 program/erase cycles, guaranteeing a long operational lifespan and reliability.
• Data Retention: Offers data retention of 100 years, ensuring the preservation of data over an extensive period without power.
• Temperature Range: Operates within an industrial temperature range of -40°C to +85°C, suitable for harsh environments.
• Package: Available in a 24-pin DIP, PLCC, or SOIC package, providing flexibility for various PCB design layouts.
• Automatic Write Timing: Internal charge pump for write/erase cycle timing, eliminating the need for an external high-voltage supply.

Applications

The CAT28C16AX20 EEPROM is designed for a broad array of applications, including but not limited to:

• Computer and computer peripheral configuration storage
• Telecommunication systems
• Industrial control systems
• Automotive systems
• Medical devices

With its robust feature set and ON Semiconductor's reputation for quality, the CAT28C16AX20 is an exceptional choice for designers and engineers looking for a reliable and flexible non-volatile memory solution.