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ECH8652-TL-H

Part No ECH8652-TL-H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 6A ECH8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 4.5V
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1000pF @ 6V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-ECH
Win Source Part Number 080873-ECH8652-TL-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ECH8652-TL-H CAD Model

Description

ON Semiconductor ECH8652-TL-H Product Overview

The ECH8652-TL-H is a high-performance, P-Channel MOSFET brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is designed to provide efficient power management and switching with high reliability, making it an ideal choice for a wide range of applications, including load switch, power management, and battery protection circuits.

Key Features

  • Low On-Resistance: The ECH8652-TL-H features a low on-resistance, which results in minimal power loss during operation and enhances overall efficiency.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which is essential for applications requiring fast response times.
  • Compact Package: The device comes in a compact TSMT5 package, which is highly beneficial for space-constrained applications.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be driven at lower voltages, making it suitable for low-voltage applications.
  • Lead-Free and RoHS Compliant: The ECH8652-TL-H is lead-free and RoHS compliant, ensuring it meets environmental standards and reduces the ecological footprint.

Applications

The versatility of the ECH8652-TL-H allows it to be used in various applications, including:

  • Power Management Systems
  • Battery-Powered Devices
  • DC/DC Converters
  • Load Switching
  • Portable Electronic Devices

Technical Specifications

Some of the technical specifications that make the ECH8652-TL-H stand out include:

  • Drain-Source Voltage (Vdss): -20V
  • Continuous Drain Current (Id): -6A
  • Power Dissipation (Pd): 1.25W
  • Gate-Source Voltage (Vgs): ±8V
  • Operating Temperature Range: -55°C to +150°C

With its combination of performance and reliability, the ECH8652-TL-H from ON Semiconductor is an excellent choice for designers and engineers looking to optimize their power management solutions. Its robustness and efficiency make it a valuable component in any electronic system requiring a high-quality P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7397 $59.1760
195+ $0.6070 $118.3650
295+ $0.5880 $173.4600
410+ $0.5691 $233.3310
525+ $0.5500 $288.7500
705+ $0.4932 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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