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ECH8659-TL-W

Part No ECH8659-TL-W
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7A ECH8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4V Drive
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 24 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.6V @ 1mA
Max Gate Charge 11.8nC @ 10V
Max Input Capacitance 710pF @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating 150°C (TJ)
Case / Package SOT-28FL/ECH8
Win Source Part Number 1035776-ECH8659-TL-W
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ECH8659-TL-W CAD Model

Description

The ECH8659-TL-W is a state-of-the-art P-Channel MOSFET brought to you by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed for high-efficiency power management applications and is highly regarded for its low on-resistance and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The ECH8659-TL-W offers an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET supports high-frequency operations, making it suitable for modern electronic applications that demand quick response times.
  • Advanced Packaging: Encased in a compact TSMT-6 package, the ECH8659-TL-W maximizes board space without compromising performance, ideal for space-constrained applications.
  • Energy Efficient: The device is tailored for energy-saving applications, contributing to the development of green electronics by minimizing power wastage.
  • Thermal Performance: With its excellent thermal characteristics, the ECH8659-TL-W ensures reliable operation even under high temperature environments, maintaining performance stability.

Applications

The versatility of the ECH8659-TL-W makes it suitable for a wide range of applications, including:

  • Power management modules
  • DC/DC converters
  • Battery management systems
  • Load switches
  • Portable electronic devices

Technical Specifications

Parameter Value Polarity P-Channel Drain-Source Voltage (V<sub>DS) -30 V Continuous Drain Current (I<sub>D) -6 A Power Dissipation (P<sub>D) 1.25 W Operating Temperature Range -55°C to +150°C

In conclusion, the ECH8659-TL-W from ON Semiconductor is an exceptional choice for designers looking for a reliable, efficient, and versatile P-Channel MOSFET. Its superior performance and compact size make it a valuable component for a myriad of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $58.6467 $58.6467
3+ $48.1204 $144.3612
4+ $46.6166 $186.4664
5+ $45.1128 $225.5640
6+ $43.6091 $261.6546
8+ $39.0978 $312.7824
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 230 pieces
Order Increment : 1 pcs
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