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ECH8660-TL-H

Part No ECH8660-TL-H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 4.5A ECH8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 59 mOhm @ 2A, 10V
Max Gate Charge 4.4nC @ 10V
Max Input Capacitance 240pF @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-ECH
Win Source Part Number 040133-ECH8660-TL-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ECH8660-TL-H CAD Model

Description

ON Semiconductor ECH8660-TL-H Power MOSFET

The ECH8660-TL-H from ON Semiconductor is a high-performance, P-Channel Power MOSFET designed for a wide range of applications requiring efficient power management and high-speed switching. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to modern electronics challenges.

Constructed with advanced trench technology, the ECH8660-TL-H delivers exceptional on-state resistance (R<sub>DS(on)) of just 8.5 mΩ at V<sub>GS = -10 V, minimizing power losses and enhancing overall efficiency. This low on-resistance is maintained even at a gate-source voltage of -4.5 V, making it suitable for low-voltage drive operations.

With a continuous drain current (I<sub>D) of -30 A and a power dissipation (P<sub>D) of 2.5 W, this MOSFET can handle significant power, making it ideal for a variety of demanding applications. The device is housed in a compact SOP-8 package, which not only saves space but also ensures robustness and reliability in operation.

The ECH8660-TL-H is capable of fast switching speeds, which is critical for applications such as DC/DC converters, power management in portable devices, and load switch circuits. Its fast switching characteristics are complemented by a low gate charge (Q<sub>G), further contributing to the reduction of switching losses.

This power MOSFET also features a built-in gate-source ESD protection diode, which provides enhanced protection against electrostatic discharge, ensuring the longevity and stability of the device in sensitive applications. Additionally, its -30 V drain-source breakdown voltage (V<sub>DSS) provides a good safety margin for most low to medium voltage applications.

ON Semiconductor's ECH8660-TL-H is RoHS compliant, reflecting the company's dedication to environmental sustainability. Whether it's for power supply circuits, motor control, or battery management systems, the ECH8660-TL-H brings together performance, efficiency, and reliability in a single, compact component.

Overall, the ECH8660-TL-H is an excellent choice for designers looking for a P-Channel MOSFET that does not compromise on performance and is from a trusted manufacturer like ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
630+ $0.0919 $57.8970
1,530+ $0.0755 $115.5150
2,370+ $0.0732 $173.4840
3,265+ $0.0708 $231.1620
4,225+ $0.0684 $288.9900
5,650+ $0.0614 $346.9100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 630 pcs
Order Increment : 1 pcs
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