The FDG6332C-PG from ON Semiconductor is a high-performance, dual N & P-Channel PowerTrench® MOSFET designed to deliver efficient power management and control in a compact package. This MOSFET is an ideal choice for a wide range of applications, including power switching circuits, power management in portable and battery-powered products, and load switch applications.
Key Features
- Low Power Consumption: Designed with PowerTrench technology to minimize on-state resistance, resulting in lower power loss and improved energy efficiency.
- Dual Channel Configuration: Integrates one N-channel and one P-channel MOSFET in a single SC70-6 package, saving space and reducing component count in circuit designs.
- High-Speed Switching: Capable of fast switching speeds, which is crucial for applications requiring quick response times.
- Low Threshold Voltage: Features a low gate threshold voltage, making it suitable for low voltage applications and ensuring easy drive from logic level circuits.
- RoHS Compliant: Manufactured with environmentally friendly materials, complying with RoHS standards for hazardous substance regulations.
Applications
- Power management for portable devices
- DC/DC converters
- Battery management systems
- Load switch circuits
- Power supply distribution controls
Product Specifications
| Parameter |
Value |
| Package |
SC70-6 |
| Drain-Source Voltage (VDS N-Channel) |
20V |
| Drain-Source Voltage (VDS P-Channel) |
-20V |
| Continuous Drain Current (ID N-Channel) |
540 mA |
| Continuous Drain Current (ID P-Channel) |
-430 mA |
| Power Dissipation |
250 mW |
| RDS(ON) |
0.5Ω (N-Channel), 0.8Ω (P-Channel) |
The FDG6332C-PG MOSFET from ON Semiconductor offers a reliable and efficient solution for designers looking to optimize their power management systems with a versatile and compact component.