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FGA15N120ANTDTU

Part No FGA15N120ANTDTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description NPT Trench Technology, Positive temperature coefficient | IGBT 1200V 30A 186W TO3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 45A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 15A
Maximum Power 186W
Switching Energy 3mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 120nC
Td (on/off) at 25°C 15ns/160ns
Test Condition 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 330ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 730917-FGA15N120ANTDTU
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGA15N120ANTDTU CAD Model

Description

ON Semiconductor FGA15N120ANTDTU IGBT Overview

The ON Semiconductor FGA15N120ANTDTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for a range of power applications. This IGBT combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capabilities of a bipolar transistor. It is an ideal choice for high-efficiency, fast-switching applications.

Key Features

  • High Current Capability: The FGA15N120ANTDTU supports a continuous collector current of up to 15A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 1200V, this IGBT can handle high voltage operations, providing a margin for safety and reliability.
  • Low Saturation Voltage: The device offers a low Vce(sat) of typically 2.3V, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: It features fast switching characteristics with a typical fall time (tf) of just 210ns, contributing to reduced switching losses.
  • Co-Packaged Free Wheeling Diode: The IGBT comes with an integrated anti-parallel diode, which provides protection during inductive switching and simplifies circuit design.

Applications

The FGA15N120ANTDTU is suited for a wide range of applications, particularly where efficiency and power density are critical. Typical applications include:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction heating
  • Motor drives and inverters
  • Switch Mode Power Supplies (SMPS)

Package and Quality

ON Semiconductor's FGA15N120ANTDTU comes in a TO-3PN package, which provides robust thermal performance and is suitable for through-hole mounting. The device is RoHS compliant, ensuring adherence to the latest environmental standards. ON Semiconductor is known for its commitment to quality, and this IGBT is no exception, meeting rigorous industry standards for performance and reliability.

Conclusion

The FGA15N120ANTDTU from ON Semiconductor represents a reliable and efficient solution for designers seeking a high-voltage, high-current IGBT with fast-switching capabilities. Its integrated features and robust package make it a versatile component for a broad spectrum of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.9789 $62.8101
21+ $5.7263 $120.2523
32+ $5.5472 $177.5104
44+ $5.3684 $236.2096
56+ $5.1894 $290.6064
75+ $4.6526 $348.9450
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Availability: 4,740 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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