ON Semiconductor MMBF2202PT1G - N-Channel Enhancement Mode Field Effect Transistor

The MMBF2202PT1G is a versatile and high-performance N-Channel Enhancement Mode Field Effect Transistor (FET) designed and manufactured by ON Semiconductor. This compact and energy-efficient component is ideal for a wide range of applications, including power management, load switch, and signal processing circuits.

Key Features

• Device Type: N-Channel MOSFET
• Configuration: Single
• Drain-Source Voltage (V<sub>DS): 20V
• Continuous Drain Current (I<sub>D): 230mA
• Power Dissipation (P<sub>D): 225mW
• Gate-Source Voltage (V<sub>GS): ±8V
• Minimum Gate Threshold Voltage (V<sub>GS(th)): 0.8V
• Maximum Gate Threshold Voltage (V<sub>GS(th)): 2.5V
• Operating Junction Temperature Range: -55°C to 150°C
• Package: SOT-23 (TO-236)

Performance and Quality

The MMBF2202PT1G boasts high-speed switching performance, which is essential for modern electronic devices that require efficient power regulation and signal modulation. The low on-resistance of this FET ensures minimal power loss during operation, contributing to the overall energy efficiency of the system. Furthermore, ON Semiconductor's commitment to quality ensures that this MOSFET provides reliable performance with a robust thermal management design, making it suitable for operation in a wide temperature range.

Applications

Thanks to its compact SOT-23 package and high current handling capability, the MMBF2202PT1G is an excellent choice for space-constrained applications. It is commonly used in:

• Power management systems
• DC/DC converters
• Battery-powered devices
• Motor control circuits
• Switching regulators
• Portable electronics

ON Semiconductor's MMBF2202PT1G N-Channel MOSFET is a reliable and efficient solution for designers looking to enhance their electronic designs with a high-quality, high-performance FET. With its low on-resistance, high-speed switching, and thermal efficiency, this MOSFET is well-suited for a variety of challenging applications.