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MMBT2907ALT1G

Part No MMBT2907ALT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023739-MMBT2907ALT1G
Family Name MMBT2907A
Introduction Date August 18, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMBT2907ALT1G CAD Model

Description

Product Overview: MMBT2907ALT1G - ON Semiconductor

The MMBT2907ALT1G is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, renowned for its reliability and performance in a wide array of electronic applications. This semiconductor device is designed for general-purpose amplifier and switching applications, making it a versatile component for both commercial and industrial use.

Key Features

  • Transistor Polarity: PNP - This indicates that the transistor's operation involves the movement of holes as the majority charge carriers.
  • Collector-Emitter Voltage (VCEO): 60V - The maximum voltage that can be applied from the collector to the emitter while the base is open-circuited.
  • Collector Current (IC): 600mA - The maximum current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 225mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 300 - This range indicates the amplification factor of the transistor, a measure of how much the input current to the base is amplified in the collector circuit.
  • Package / Case: SOT-23-3 - A compact, surface-mount package that allows for efficient use of PCB space.

Applications

The MMBT2907ALT1G is suitable for a broad spectrum of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching circuits in consumer electronics
  • Power management in portable devices
  • Load switch or inverter circuits

Quality and Reliability

ON Semiconductor is committed to delivering high standards of quality and reliability. The MMBT2907ALT1G is manufactured under stringent conditions, ensuring consistent performance and durability. This transistor is also ROHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Conclusion

With its robust performance specifications and flexible application potential, the MMBT2907ALT1G from ON Semiconductor stands as an excellent choice for designers and engineers looking to incorporate a reliable PNP transistor into their electronic designs. Its SOT-23-3 package ensures compatibility with modern surface-mount technology, providing a space-saving solution without compromising on power or functionality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,880+ $0.0129 $50.0520
8,265+ $0.0121 $100.0065
12,825+ $0.0117 $150.0525
18,350+ $0.0109 $200.0150
24,040+ $0.0104 $250.0160
30,000+ $0.0100 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 207,000 pieces
MOQ: 3880 pcs
Order Increment : 1 pcs
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