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Same model may have multiple batches, images only for reference.
IRF540ZSPBF Real Image
Same model may have multiple batches, images only for reference.

IRF540ZSPBF

Part No IRF540ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 36A D2PAK
Datasheet
IRF540ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 92W (Tc)
Maximum Rds On at Id,Vgs 26.5 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046518-IRF540ZSPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF540ZSPBF CAD Model

Description

The Infineon Technologies IRF540ZSPBF is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 92W (Tc)
  • Continuous Drain Current: Up to 36A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 26.5 mOhm @ 22A, 10V
  • Package: D2PAK
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.7943 $87.5886
3+ $35.9338 $107.8014
5+ $34.8108 $174.0540
6+ $33.6879 $202.1274
8+ $32.5650 $260.5200
11+ $29.1962 $321.1582
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