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NJVMJD45H11T4G

Part No NJVMJD45H11T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V
Power - Max 1.75 W
Frequency - Transition 90MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD45
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 740491-NJVMJD45H11T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD45H11T4G CAD Model

Description

The NJVMJD45H11T4G is a state-of-the-art bipolar power transistor designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This high-performance product is well-suited for a wide range of applications, particularly in power regulation and switching where efficiency and reliability are of paramount importance.

Key Features

  • Voltage and Current Rating: The NJVMJD45H11T4G boasts a collector-emitter voltage (Vceo) rating of 80V, and a continuous collector current (Ic) rating of 8A, making it capable of handling moderate power levels in electronic circuits.
  • Power Dissipation: With a power dissipation of 40W, this device can efficiently handle thermal energy in various operating conditions without compromising performance.
  • High DC Current Gain: The high DC current gain (hFE) ensures that the transistor can amplify the electrical current effectively, which is crucial for applications that require signal amplification.
  • Fast Switching Speeds: Designed for rapid switching, the NJVMJD45H11T4G minimizes transition times, thus improving the efficiency of the circuit and reducing energy losses.
  • Package: Enclosed in a TO-252 (DPAK) surface-mount package, it is designed for compact PCB layouts, providing a space-saving solution without sacrificing performance.

Applications

The NJVMJD45H11T4G is versatile and can be used in various applications, including:

  • Power supply regulators
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Switching applications

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NJVMJD45H11T4G is built to meet rigorous standards, ensuring long-term reliability and performance in commercial and industrial environments. Its robust design is geared towards providing a long operational lifespan, even under challenging conditions.

For engineers and designers looking for a reliable power transistor capable of delivering efficiency and precision, the NJVMJD45H11T4G from ON Semiconductor is an excellent choice that combines innovation with practicality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5014 $60.1680
250+ $0.4691 $117.2750
385+ $0.4529 $174.3665
550+ $0.4206 $231.3300
715+ $0.4044 $289.1460
895+ $0.3882 $347.4390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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