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NSBC124EDP6T5G

Part No NSBC124EDP6T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 2NPN 50V SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 15 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA - 339mW Surface Mount SOT-963
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package SOT-963
Case / Package SOT-963
Family Name NSBC124
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 8000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 929383-NSBC124EDP6T5G
Ultra Librarian 3D Model Ultra Librarian NSBC124EDP6T5G CAD Model

Description

The ON Semiconductor NSBC124EDP6T5G represents a high-performance NPN bipolar transistor, meticulously designed for applications requiring efficient amplification and fast switching. This device is an essential component for modern electronic systems, offering a blend of reliability, compactness, and power efficiency.

Key Features

  • Transistor Type: NPN - This type of transistor is well-suited for high-speed switching and amplification, making it a versatile choice for a wide range of electronic circuits.
  • Package: The NSBC124EDP6T5G comes in a compact SOT-963 package, which is ideal for space-constrained applications.
  • Collector-Emitter Voltage (VCEO): It supports a maximum collector-emitter voltage of 50V, providing a good balance between performance and robustness for various circuit designs.
  • Collector Current (IC): The maximum collector current is 100mA, which allows the transistor to handle moderate power levels while maintaining its efficiency.
  • DC Current Gain (hFE): With a high DC current gain, this transistor can amplify weak signals without significant power loss, ensuring signal integrity in analog circuits.
  • Transition Frequency (fT): The NSBC124EDP6T5G boasts a transition frequency of 250MHz, enabling quick response times and high-frequency operation in applications such as RF amplifiers.
  • Power Dissipation (Pd): It has a power dissipation of 200mW, allowing it to handle a reasonable amount of power without overheating.
  • RoHS Compliant: The device adheres to RoHS standards, ensuring that it is manufactured without the use of hazardous substances, making it environmentally friendly.

Applications

The NSBC124EDP6T5G is suitable for a diverse range of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Switching circuits in power management systems
  • Driver stages in amplifiers and oscillators
  • General-purpose switching and amplification in consumer electronics
  • RF applications requiring high-frequency performance

Overall, the NSBC124EDP6T5G from ON Semiconductor is a reliable and efficient choice for designers looking to optimize their electronic circuits with a robust NPN bipolar transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,345+ $0.0372 $50.0340
3,270+ $0.0306 $100.0620
5,070+ $0.0296 $150.0720
6,970+ $0.0287 $200.0390
9,030+ $0.0277 $250.1310
12,100+ $0.0248 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,524 pieces
MOQ: 1345 pcs
Order Increment : 1 pcs
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