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SI4196DY-T1-E3

Part No SI4196DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
Power Dissipation (Max) 2W (Ta), 4.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4196
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277522-SI4196DY-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI4196DY-T1-E3 CAD Model

Description

The SI4196DY-T1-E3 is a N-channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET
  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id): 8A @ 25°C
  • Maximum On-Resistance (Rds On): 27mOhm @ 4.5V Vgs and 8A Id
  • Gate Charge (Qg): 22 nC @ 8V Vgs
  • Input Capacitance (Ciss): 830 pF @ 10 V Vds
  • Maximum Vgs: ±8V
  • Operating Temperature Range: -55°C to 150°C
  • Package Type: 8-SOIC

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3185 $58.9225
445+ $0.2614 $116.3230
685+ $0.2533 $173.5105
945+ $0.2451 $231.6195
1,220+ $0.2369 $289.0180
1,635+ $0.2124 $347.2740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,600 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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