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Same model may have multiple batches, images only for reference.
SIR402DP-T1-E3
Same model may have multiple batches, images only for reference.

SIR402DP-T1-E3

Part No SIR402DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, N, SO-8; Transistor Type: MOSFET; Transistor Polarity: N; Typ Voltage Vds: 30V; Current, Id Cont: 35A; On...
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Products specifications Report Issue?

Continuous Drain Current (ID) 35 A
Drain to Source Resistance 6 mΩ
Drain to Source Voltage (Vdss) 30 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 4.2 W
Min Operating Temperature -55 °C
Nominal Vgs 1.15 V
Number of Pins 8
Packaging Cut Tape
Power Dissipation 4.2 W
REACH SVHC Unknown
Resistance 6 mΩ
Rise Time 20 ns
RoHS Compliant
Threshold Voltage 1.15 V
Win Source Part Number 1093113-SIR402DP-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SIR402DP-T1-E3 CAD Model

Description

The Vishay SIR402DP-T1-E3 is a transistor with a drain to source voltage (Vdss) of 30 V and a power dissipation of 4.2 W. SIR402DP-T1-E3 is manufactured by Vishay.

  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation: 4.2 W
  • Resistance: 6 mΩ
  • Number of Pins: 8
  • Rise Time: 20 ns
  • Category: Transistor - FETs, MOSFETs - RF
  • Supply and Demand: Shortage
  • Maximum Operating Temperature: 150 °C
  • RoHS Compliant: Yes
  • Minimum Operating Temperature: -55 °C
  • Continuous Drain Current (ID): 35 A
  • Drain to Source Resistance: 6 mΩ
  • Nominal Vgs: 1.15 V
  • Threshold Voltage: 1.15 V

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