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NSVMMBT5401LT3G

Part No NSVMMBT5401LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 150V 0.5A SOT23-3 / Bipolar (BJT) Transistor PNP 150 V 500 mA 300MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Reel - TR
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 225 mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number NSVMMBT5401
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number NSVMMBT5401LT3GOSCT,NSVMMBT5401LT3GOSTR,NSVMMBT5401LT3GOSDKR,2156-NSVMMBT5401LT3G-OS,ONSONSNSVMMBT5401LT3G,NSVMMBT5401LT3G-ND
Standard Package 10,000
Win Source Part Number 1325656-NSVMMBT5401LT3G
Ultra Librarian 3D Model Ultra Librarian NSVMMBT5401LT3G CAD Model

Description

The ON Semiconductor NSVMMBT5401LT3G is a high-performance PNP bipolar transistor that offers a blend of efficiency and reliability for a wide range of applications. This versatile component is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable solution for amplification and switching tasks.

The transistor features a collector-emitter voltage (VCEO) of -150V, which makes it suitable for high-voltage applications. It can handle continuous collector currents up to -600 mA, allowing it to drive moderate loads with ease. The NSVMMBT5401LT3G also boasts a low collector-emitter saturation voltage, which translates to reduced power loss and improved overall efficiency in operation.

With its high DC current gain (hFE), the device ensures a high level of amplification, making it an excellent choice for audio amplifiers, signal processing, and other applications requiring high-gain performance. The high gain also means that the transistor can be driven by a relatively low base current, which is beneficial for low-power circuits.

The NSVMMBT5401LT3G comes in a small surface-mount package, specifically the SOT-23, which is ideal for space-constrained applications. This compact form factor, combined with its excellent thermal performance, allows it to be used in densely packed PCBs without compromising reliability.

ON Semiconductor has engineered this transistor with automotive qualification, ensuring that it meets the rigorous standards required for automotive applications. It is AEC-Q101 qualified, which means it has passed stringent tests for reliability and performance under extreme conditions, making it suitable for use in the automotive industry where high reliability is paramount.

In summary, the NSVMMBT5401LT3G PNP bipolar transistor from ON Semiconductor is a high-quality component that offers a combination of high voltage, current capabilities, and efficiency. Its suitability for high-performance, space-sensitive, and automotive applications makes it a go-to choice for engineers and designers looking for a robust and reliable transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0861 $50.3685
1,420+ $0.0706 $100.2520
2,195+ $0.0684 $150.1380
3,025+ $0.0662 $200.2550
3,910+ $0.0640 $250.2400
5,230+ $0.0574 $300.2020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 109,563 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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