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NTD18N06LT4G

Part No NTD18N06LT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 18A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 675pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 2.1W (Ta), 55W (Tj)
Maximum Rds On at Id,Vgs 65 mOhm @ 9A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060596-NTD18N06LT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTD18N06L
Introduction Date September 05, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian NTD18N06LT4G CAD Model

Description

ON Semiconductor NTD18N06LT4G - Power MOSFET

The NTD18N06LT4G is a high-performance Power MOSFET developed by ON Semiconductor, designed to meet a wide range of applications requiring efficient power management. This robust component is part of ON Semiconductor's Power MOSFET portfolio, which is known for its reliability and efficiency in power conversion and management tasks.

Key Features

  • Low Drain-Source On-Resistance: The device features a low R<sub>DS(on), which minimizes on-state losses and enhances efficiency, making it suitable for high-efficiency power supplies and other power-intensive applications.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of 18A, the NTD18N06LT4G can handle high current loads, which is essential for applications such as motor control and power regulators.
  • High Voltage Tolerance: The MOSFET can withstand drain-source voltages up to 60V, providing a good safety margin for applications with varying voltage requirements.
  • Logic Level Gate Drive: It can be driven directly by logic-level voltages, simplifying the design of the driving circuitry and making it compatible with microcontroller-based systems.

Applications

The NTD18N06LT4G is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management in portable and consumer electronics
  • Motor control systems
  • Switching regulators
  • Power supplies for computer peripherals

Package and Quality

The device is available in a Pb-free, RoHS-compliant DPAK package, ensuring environmental safety and compatibility with modern lead-free soldering processes. ON Semiconductor's commitment to quality is reflected in the NTD18N06LT4G's design and manufacturing, which adheres to stringent industry standards for performance and reliability.

Conclusion

With its impressive on-state resistance, high current capacity, and ability to handle significant voltage levels, the NTD18N06LT4G from ON Semiconductor is an excellent choice for designers looking for a Power MOSFET that offers both performance and reliability. Its logic level gate drive compatibility and robust package make it a versatile component suitable for a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5681 $54.8835
80+ $1.2867 $102.9360
125+ $1.2465 $155.8125
170+ $1.2063 $205.0710
215+ $1.1661 $250.7115
290+ $1.0455 $303.1950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,869 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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