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NTD3055L170T4G

Part No NTD3055L170T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 275pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj)
Maximum Rds On at Id,Vgs 170 mOhm @ 4.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004154-NTD3055L170T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD3055L170T4G CAD Model

Description

ON Semiconductor NTD3055L170T4G - Power MOSFET

The NTD3055L170T4G from ON Semiconductor is a high-performance Power MOSFET designed to handle high levels of electrical current and voltage efficiently. This device is an optimal solution for a variety of power applications where energy efficiency and reliability are crucial. It is commonly used in power supply circuits, motor controls, and as a switch in various electronic devices.

Built with advanced technology, the NTD3055L170T4G MOSFET features a low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses. This characteristic, combined with its ability to operate at high switching speeds, makes it an energy-efficient choice for modern electronic applications. The device also includes a robust and durable design that can withstand high temperatures and thermal stresses, ensuring a long operational lifespan.

The NTD3055L170T4G boasts a threshold voltage (V<sub>GS(th)) that allows for easy drive capability, making it a versatile component for various circuit designs. Its drain-to-source voltage (V<sub>DSS) of 60V and continuous drain current (I<sub>D) of 17A demonstrate its ability to handle significant power levels, which is essential for high-performance applications.

This MOSFET is offered in a surface-mount package, which allows for a compact footprint and easy integration into PCB designs. The package is designed to optimize heat dissipation, ensuring reliable operation even under high power conditions. The NTD3055L170T4G is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability by avoiding the use of hazardous substances in its products.

In summary, the NTD3055L170T4G from ON Semiconductor is a highly efficient, durable, and versatile Power MOSFET that meets the requirements of various high-power electronic applications. Its low on-resistance, high switching speed, and robust design make it a top choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3818 $59.1790
325+ $0.3573 $116.1225
505+ $0.3450 $174.2250
725+ $0.3203 $232.2175
940+ $0.3081 $289.6140
1,175+ $0.2957 $347.4475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,393 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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