The ON Semiconductor NTD5806N is a high-performance Power MOSFET designed to meet the rigorous demands of a variety of applications. This N-channel transistor offers an excellent combination of low on-resistance and high switching speed, making it ideal for high-efficiency power management tasks.
Key Features
- Low On-Resistance: The NTD5806N boasts an exceptionally low on-resistance of just 8.7 mOhms at 10V, which translates to reduced conduction losses and improved overall efficiency in your circuits.
- High Current Capacity: With a continuous drain current of 60A, this MOSFET can handle high current loads, making it suitable for demanding applications such as power supplies and motor control.
- Fast Switching Speed: The device's fast switching capability ensures minimal transition losses, which is critical for applications where high switching frequencies are required.
- Robust Thermal Performance: The NTD5806N is encapsulated in a TO-252 (DPAK) package, which offers excellent thermal characteristics for better heat dissipation and improved reliability under high-temperature operating conditions.
Applications
The versatility of the NTD5806N allows it to be used in a wide array of applications, including:
- DC/DC Converters
- Power Management for Computers and Servers
- Motor Drives and Inverters
- Battery Management Systems
- Switch Mode Power Supplies (SMPS)
Product Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
60V |
| Gate-to-Source Voltage (VGS) |
±20V |
| Continuous Drain Current (ID) |
60A |
| Power Dissipation (PD) |
48W |
| Operating Temperature Range |
-55°C to +175°C |
With its robust design and superior electrical characteristics, the ON Semiconductor NTD5806N Power MOSFET is a reliable choice for designers looking to enhance the performance and efficiency of their power management systems.