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NTGD4167CT1G

Part No NTGD4167CT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.6A, 1.9A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Max Input Capacitance 295pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 060639-NTGD4167CT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name NTGD4167C
Introduction Date April 03, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian NTGD4167CT1G CAD Model

Description

ON Semiconductor NTGD4167CT1G: High-Performance Power MOSFET

The NTGD4167CT1G is a state-of-the-art power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This compact and efficient device comes in a small surface-mount package and is engineered to deliver superior switching performance and high energy efficiency in a wide range of applications.

Key Features

  • Low On-Resistance: The NTGD4167CT1G features an exceptionally low on-resistance, which translates to minimal power loss during operation and enhances overall efficiency.
  • Dual N-Channel: This device contains two N-Channel MOSFETs in a single package, providing design flexibility and reducing the footprint on the PCB.
  • High-Speed Switching: Designed for fast switching applications, the NTGD4167CT1G ensures that power conversion processes are both quick and reliable.
  • PowerTrench® Technology: Incorporating ON Semiconductor's proprietary PowerTrench® technology, this MOSFET offers reduced gate charge and lower switching losses.
  • RoHS Compliant: The NTGD4167CT1G is compliant with RoHS standards, ensuring that it meets global environmental and regulatory requirements.

Applications

The versatility of the NTGD4167CT1G makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor control circuits
  • Battery management systems
  • Load switches
  • Other high-efficiency power switching applications

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the NTGD4167CT1G delivers reliable performance under various conditions. The device is characterized for operation from -55°C to 150°C, making it suitable for extreme environments.

Product Specifications

The NTGD4167CT1G comes in a leadless SOT-963 package, which is not only space-saving but also offers excellent thermal performance. With a continuous drain current of 3.6 A and a drain-source voltage of 20 V, this MOSFET is built to handle significant power levels while maintaining a low thermal footprint.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit ON Semiconductor's official website or contact their local ON Semiconductor sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3074 $50.7210
400+ $0.2522 $100.8800
615+ $0.2443 $150.2445
850+ $0.2364 $200.9400
1,095+ $0.2286 $250.3170
1,465+ $0.2049 $300.1785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 301,782 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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