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NTJD4105CT1G

Part No NTJD4105CT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V/8V SOT-363 / Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V, 8V
Continuous Drain Current at 25°C 630mA, 775mA
Maximum Rds On at Id,Vgs 375 mOhm @ 630mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 46pF @ 20V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 025774-NTJD4105CT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Multimedia
Family Name NTJD4105C
Introduction Date January 19, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTJD4105CT1G CAD Model

Description

The NTJD4105CT1G from ON Semiconductor is a high-performance, dual N-Channel Power MOSFET designed to deliver efficient power management and control in a wide range of applications. This Power MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features

  • Low On-Resistance: The NTJD4105CT1G features a low on-resistance, which enhances its performance by reducing power loss and improving efficiency in electronic circuits.
  • Dual N-Channel Configuration: With two N-Channel MOSFETs in one package, this device allows for compact circuit designs and reduced part count, which is essential for space-constrained applications.
  • High-Speed Switching: The device is optimized for fast switching, making it suitable for high-frequency power conversion and regulation tasks.
  • Power Saving: The low threshold voltage ensures that the MOSFET can be driven at lower voltages, which translates into power savings and extended battery life in portable devices.
  • Small Footprint: Housed in a compact TSOP-6 package, the NTJD4105CT1G is ideal for applications where PCB real estate is at a premium.

Applications

The NTJD4105CT1G is versatile and can be used in a variety of applications, including:

  • Power management for portable and battery-powered devices
  • DC/DC converters
  • Load/switching control circuits
  • Motor control circuits
  • Computing and telecommunications

Technical Specifications

Some of the key technical specifications of the NTJD4105CT1G include:

  • Drain-to-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.5A
  • Power Dissipation (Pd): 1.25W
  • RDS(on): 70 mOhms at Vgs = 4.5V
  • Operating Temperature Range: -55°C to 150°C

With its robust construction, the NTJD4105CT1G is designed to withstand the rigors of everyday use in industrial and commercial environments. Whether you are designing a new power system or looking to upgrade an existing one, the NTJD4105CT1G from ON Semiconductor is an excellent choice for reliable and efficient power control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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