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NTMFS5830NLT1G

Part No NTMFS5830NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 40 V, 172 A, 2.3 m
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 172A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 113nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5880pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.2W (Ta), 125W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 5-DFN (5x6) (8-SOFL)
Package 8-PowerTDFN, 5 Leads
Win Source Part Number 1232583-NTMFS5830NLT1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NTMFS5830NL
Introduction Date May 21, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTMFS5830NLT1G CAD Model

Description

ON Semiconductor NTMFS5830NLT1G Power MOSFET

The NTMFS5830NLT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of a wide range of electronic applications, offering a combination of low on-resistance, high switching speed, and robust thermal performance.

Key Features:

  • Low RDS(on): The device boasts an exceptionally low drain-to-source on-resistance of typically 1.7 mΩ, which enhances its efficiency by minimizing conduction losses.
  • High Current Capacity: With a continuous drain current of 160 A, the NTMFS5830NLT1G can handle high current loads, making it suitable for demanding power applications.
  • Power Efficiency: Designed for power efficiency, this MOSFET features a low gate charge and reduced capacitance, ensuring swift switching performance and lower switching losses.
  • Thermal Management: The device is encapsulated in a compact, thermally enhanced 5x6 mm² flat lead package that provides excellent thermal performance and helps in maintaining operational stability.

Applications:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Applications
  • Computing and Server Systems
  • Telecommunication Equipment

The NTMFS5830NLT1G is manufactured using ON Semiconductor's advanced PowerTrench® process that enables the device to achieve low gate charge and capacitance, which in turn facilitates lower switching losses. This process, along with the device's inherent properties, allows for high-efficiency power conversion in both hard-switched and soft-switched circuits.

Whether you're designing power supplies for consumer electronics, industrial motor drives, or automotive systems, the NTMFS5830NLT1G offers the reliability, efficiency, and thermal performance that engineers need to create compact, energy-efficient solutions. With its robust design and superior electrical characteristics, the NTMFS5830NLT1G from ON Semiconductor is a preferred choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,685 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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