ON Semiconductor NTMS4802NR2G: High-Performance Power MOSFET

The ON Semiconductor NTMS4802NR2G is a cutting-edge power MOSFET designed for a broad range of applications that require high efficiency and power density. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, which are engineered to meet the demands of modern electronic systems.

Key Features

• Low R<sub>DS(on): The NTMS4802NR2G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
• High Continuous Drain Current (I<sub>D): With the capability to handle a high continuous drain current, this MOSFET can support applications that demand robust power handling without compromising performance.
• Enhanced Thermal Performance: The package design of the NTMS4802NR2G is optimized for excellent thermal performance, ensuring reliable operation even under high power and temperature conditions.
• Fast Switching Speed: The device's fast switching capabilities make it an ideal choice for high-frequency power supplies and DC-DC converters, where switching losses are critical.

Applications

The versatile nature of the NTMS4802NR2G makes it suitable for a wide array of applications, including:

• DC/DC Converters
• Power Supply Load Switches
• Motor Drives
• Battery Management Systems
• Computing and Server Applications

Product Specifications

The NTMS4802NR2G is a N-channel MOSFET with the following specifications:

• V<sub>DS (Drain-Source Voltage): 30V
• I<sub>D (Continuous Drain Current): 6.5A
• R<sub>DS(on) (Static Drain-Source On-Resistance): 24 mΩ at V<sub>GS = 10V
• Package: SOIC-8

With its robust construction and high-performance characteristics, the NTMS4802NR2G from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power management systems.