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NTR4502PT3G

Part No NTR4502PT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.13A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Tj)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.95A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084012-NTR4502PT3G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals, Consumer Electronics, Industrial
Ultra Librarian 3D Model Ultra Librarian NTR4502PT3G CAD Model

Description

The ON Semiconductor NTR4502PT3G is a high-performance P-Channel Power MOSFET designed to deliver efficient power management and control in a wide range of applications. This device is an optimal solution for compact and power-efficient designs, particularly suitable for load switch and power management tasks within consumer, automotive, and industrial electronics.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it suitable for low-voltage applications and ensuring efficient operation at lower gate drive voltages.
  • High Current Capability: With a continuous drain current of 4.9 A, the NTR4502PT3G can handle significant current, making it ideal for high-power applications.
  • Low On-Resistance: The MOSFET's low on-resistance (R<sub>DS(on)) minimizes power loss and improves overall efficiency, which is critical for power-sensitive designs.
  • Small Footprint: Housed in a compact SOT-23 package, it is designed for space-constrained applications without compromising performance.
  • Thermal Management: Excellent thermal performance ensures reliability and longevity, even in environments with elevated temperatures.

Applications

The versatility of the NTR4502PT3G allows it to be used in various applications, including:

  • Power Management Circuits
  • Load Switches
  • Battery Management Systems
  • DC-DC Converters
  • Portable Electronic Devices
  • Motor Control Systems

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20 V Gate-Source Voltage (V<sub>GS) ±8 V Continuous Drain Current (I<sub>D) -4.9 A Power Dissipation (P<sub>D) 1.25 W R<sub>DS(on) 70 mΩ @ V<sub>GS = -4.5 V

With its robust design and energy-efficient operation, the ON Semiconductor NTR4502PT3G P-Channel Power MOSFET is a reliable and practical component for any circuit needing effective power control.

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