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NTTS2P02R2

Part No NTTS2P02R2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.4A 8MICRO
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 550pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 780mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 118086-NTTS2P02R2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTTS2P02R2 CAD Model

Description

The ON Semiconductor NTTS2P02R2 is an advanced Power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, featuring low R<sub>DS(on) and low gate charge to minimize conduction and switching losses.

Key Features

  • Low On-Resistance: The NTTS2P02R2 boasts an ultra-low R<sub>DS(on) which ensures minimal voltage drop across the device when it is in the 'on' state, leading to increased efficiency in power conversion applications.
  • High Switching Speed: The fast switching capabilities of this MOSFET make it suitable for high-frequency power switching applications, reducing energy loss during the switching process.
  • Power-Saving: With its low gate charge, the NTTS2P02R2 enables power-saving by reducing the energy required to turn the MOSFET on and off.
  • Thermal Management: The device is encapsulated in a compact package that enhances thermal performance, ensuring stability and longevity even under high-temperature operating conditions.
  • Robustness: Built to withstand tough conditions, the NTTS2P02R2 features a rugged design that is resistant to thermal runaway and ensures a high level of durability.

Applications

The NTTS2P02R2 is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Motor Control Circuits
  • Load Switches
  • Portable Devices
  • Energy Storage Systems

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 20V Continuous Drain Current (I<sub>D) 6.3A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

With its cutting-edge design and robust performance, the ON Semiconductor NTTS2P02R2 is the ideal choice for engineers looking to enhance the efficiency and reliability of their power management systems.

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