ON Semiconductor NVMFS6H836NLT1G Product Overview

The NVMFS6H836NLT1G is a high-performance, N-channel Power MOSFET from ON Semiconductor, designed to meet the rigorous demands of modern electronic circuits. With its state-of-the-art technology, this MOSFET is ideal for a wide range of applications, including power management, switching regulators, and motor control systems.

Key Features

• High Current Capacity: The device is capable of handling continuous drain currents up to 100 A, making it suitable for high-power applications.
• Low On-Resistance: With an R<sub>DS(on) of just 2.1 mΩ at V<sub>GS = 10 V, the MOSFET ensures high efficiency and low power losses during operation.
• Fast Switching Speed: The NVMFS6H836NLT1G is designed for fast switching, which is critical for reducing switching losses and improving performance in high-frequency circuits.
• High-Temperature Performance: It can operate at junction temperatures ranging from -55°C to 150°C, ensuring reliability in harsh environments.

Electrical Characteristics

• Voltage Rating: The MOSFET has a drain-to-source voltage (V<sub>DSS) of 40 V, which is suitable for a variety of mid-voltage applications.
• Gate Charge: It features a low total gate charge (Q<sub>G) that enhances its switching performance.
• Threshold Voltage: The threshold voltage (V<sub>GS(th)) is specified to ensure a precise operation under different conditions.

Package and Mounting

The NVMFS6H836NLT1G comes in a compact 5x6 mm² footprint, housed in a leadless package that is optimized for low inductance and low resistance, ensuring excellent thermal performance and space-saving on the PCB.

Applications

• DC/DC Converters
• Power Supply Modules
• Motor Drives
• Battery Management Systems
• Automotive Applications

With its robust performance and versatile application range, the NVMFS6H836NLT1G from ON Semiconductor is a reliable choice for designers looking to enhance the efficiency and performance of their power management systems.