ON Semiconductor SCH2819-TL-H Product Overview

The SCH2819-TL-H from ON Semiconductor is a high-performance, P-Channel MOSFET designed for a variety of applications. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) and low gate charge. The result is a product that offers efficiency and reliability for systems that require P-Channel switching.

Key Features

• Device Type: P-Channel MOSFET
• Configuration: Single
• Drain-Source Breakdown Voltage: -20 V
• Continuous Drain Current: -6.5 A
• RDS(on): 19 mOhms at VGS = -4.5 V
• Gate Charge: 12.5 nC (typical)
• Power Dissipation: 1.25 W
• Package: SuperSOT™-3
• RoHS: Compliant

Applications

The SCH2819-TL-H is suitable for a wide range of applications including, but not limited to:

• Load switch circuits
• Power management functions
• Battery powered devices
• DC/DC converters
• Motor control circuits

Product Advantages

ON Semiconductor's SCH2819-TL-H offers several advantages for designers looking for a reliable P-Channel MOSFET. The low RDS(on) ensures minimal power loss and heat generation, making it ideal for power-sensitive applications. Its high-speed switching capabilities improve overall system efficiency and performance. The small footprint of the SuperSOT™-3 package allows for compact PCB designs without sacrificing power handling or thermal performance.

Environmental and Quality Certifications

The SCH2819-TL-H is a testament to ON Semiconductor's commitment to environmental responsibility and quality. It is RoHS compliant, ensuring that it adheres to the latest environmental standards by avoiding the use of hazardous substances. Additionally, ON Semiconductor's quality management systems ensure that each device meets rigorous standards for performance and reliability.