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Same model may have multiple batches, images only for reference.
2SA11100Q Real Image
Same model may have multiple batches, images only for reference.

2SA11100Q

Part No 2SA11100Q
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description TRANS PNP 120V 0.5A TO126B-A1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Panasonic
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 1V @ 30mA, 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 150mA, 10V
Power - Max 1.2 W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126B-A1
Base Product Number 2SA111
Standard Package 1,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 855019-2SA11100Q
Ultra Librarian 3D Model Ultra Librarian 2SA11100Q CAD Model

Description

The 2SA11100Q is a PNP bipolar transistor designed for discrete semiconductor applications. It has a maximum power rating of 1.2W and a collector-emitter breakdown voltage of 120V.

  • Maximum Collector Current: 500mA
  • Vce Saturation: 1V @ 30mA and 300mA
  • Frequency Transition: 200MHz
  • Package: TO-225AA and TO-126-3 packages
  • Mounting Options: Through-Hole
  • Manufacturer: Panasonic

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